IRL3502PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

140W

Power Dissipation-Max :

140W Tc

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Max Operating Temperature :

150°C

Rise Time :

140ns

Package / Case :

TO-220-3

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

96 ns

Supplier Device Package :

TO-220AB

Drain to Source Resistance :

8mOhm

FET Type :

N-Channel

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

7mOhm @ 64A, 7V

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Input Capacitance :

4.7nF

Fall Time (Typ) :

130 ns

Vgs(th) (Max) @ Id :

700mV @ 250μA

Radiation Hardening :

No

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±10V

Voltage - Rated DC :

20V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tube

Mount :

Through Hole

Drain to Source Breakdown Voltage :

20V

Gate to Source Voltage (Vgs) :

10V

Series :

HEXFET®

Current Rating :

110A

Number of Pins :

3

Rds On Max :

7 mΩ

Mounting Type :

Through Hole