IRL3502

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 15V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

110A Tc

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

110A

Drain-source On Resistance-Max :

0.007Ohm

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation-Max :

140W Tc

Number of Terminations :

3

Vgs (Max) :

±10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Surface Mount :

No

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

20V

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

7m Ω @ 64A, 7V

Published :

1997

Number of Elements :

1

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING