IRL3402

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 15V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Additional Feature :

FAST SWITCHING, LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

340A

Drain Current-Max (Abs) (ID) :

85A

ECCN Code :

EAR99

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Surface Mount :

No

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.01Ohm

Transistor Application :

SWITCHING

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

290 mJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

8m Ω @ 51A, 7V

Packaging :

Tube

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±10V

Mounting Type :

Through Hole

Published :

1997

Power Dissipation-Max :

110W Tc

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Vgs(th) (Max) @ Id :

700mV @ 250μA

Drain to Source Voltage (Vdss) :

20V