IRL3303SPBF
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- Mfr.Part #
- IRL3303SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 38A D2PAK
- Stock
- 8,316
- In Stock ：
- 8,316
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 14 ns
- Height :
- 4.572mm
- Mount :
- Surface Mount
- Width :
- 9.65mm
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Power Dissipation :
- 68W
- Input Capacitance :
- 870pF
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Rise Time :
- 200ns
- Fall Time (Typ) :
- 36 ns
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Rds On Max :
- 26 mΩ
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 20A, 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Current Rating :
- 38A
- Turn On Delay Time :
- 7.4 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) :
- 30V
- Length :
- 10.668mm
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Vgs (Max) :
- ±16V
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 40mOhm
- Supplier Device Package :
- D2PAK
- Power Dissipation-Max :
- 3.8W Ta 68W Tc
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 38A
- Max Operating Temperature :
- 175°C
- Datasheets
- IRL3303SPBF
N-Channel Tube 26mOhm @ 20A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3303SPBF Overview
A device's maximal input capacitance is 870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 38A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 40mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRL3303SPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 40mOhm
a 30V drain to source voltage (Vdss)
IRL3303SPBF Applications
There are a lot of Infineon Technologies
IRL3303SPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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