IRL3303LPBF
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- Mfr.Part #
- IRL3303LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 38A TO262
- Stock
- 8,176
- In Stock ：
- 8,176
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 40mOhm
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 68W
- FET Type :
- N-Channel
- Rds On Max :
- 26 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 4.5V
- Series :
- HEXFET®
- Supplier Device Package :
- TO-262
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Current Rating :
- 38A
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Continuous Drain Current (ID) :
- 38A
- Rise Time :
- 200ns
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 20A, 10V
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Operating Temperature :
- 175°C
- Input Capacitance :
- 870pF
- Vgs (Max) :
- ±16V
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 3.8W Ta 68W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Datasheets
- IRL3303LPBF
N-Channel Tube 26mOhm @ 20A, 10V ±16V 870pF @ 25V 26nC @ 4.5V 30V TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3303LPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 870pF @ 25V.This device conducts a continuous drain current (ID) of 38A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 40mOhm, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRL3303LPBF Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 40mOhm
a 30V drain to source voltage (Vdss)
IRL3303LPBF Applications
There are a lot of Infineon Technologies
IRL3303LPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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