IRL3302STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

160A

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Series :

HEXFET®

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

700mV @ 250μA

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

20m Ω @ 23A, 7V

Case Connection :

DRAIN

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.023Ohm

Drain Current-Max (Abs) (ID) :

39A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Transistor Element Material :

SILICON

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

57W Tc

Avalanche Energy Rating (Eas) :

130 mJ

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN OVER NICKEL

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Published :

1998

Vgs (Max) :

±10V

Qualification Status :

Not Qualified

Number of Elements :

1

Surface Mount :

yes