IRL3302PBF
- Mfr.Part #
- IRL3302PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 39A TO220AB
- Stock
- 4,826
- In Stock :
- 4,826
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 39A
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Drain to Source Resistance :
- 20mOhm
- Supplier Device Package :
- TO-220AB
- Number of Pins :
- 3
- Published :
- 2004
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 23A, 7V
- Vgs (Max) :
- ±10V
- Rise Time :
- 110ns
- Fall Time (Typ) :
- 89 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 7V
- Turn-Off Delay Time :
- 41 ns
- Rds On Max :
- 20 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 15V
- Resistance :
- 23mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 10V
- Max Operating Temperature :
- 150°C
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 39A
- Series :
- HEXFET®
- Element Configuration :
- Single
- Voltage - Rated DC :
- 20V
- Input Capacitance :
- 1.3nF
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 4.5V
- Packaging :
- Tube
- Power Dissipation :
- 57W
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 700mV @ 250μA
- Drain to Source Breakdown Voltage :
- 20V
- Turn On Delay Time :
- 7.2 ns
- Power Dissipation-Max :
- 57W Tc
- Datasheets
- IRL3302PBF

N-Channel Tube 20mOhm @ 23A, 7V ±10V 1300pF @ 15V 31nC @ 4.5V 20V TO-220-3
IRL3302PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 15V.This device has a continuous drain current (ID) of [39A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=20V, the drain-source breakdown voltage is 20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.MOSFETs have 20mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 7V).
IRL3302PBF Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 41 ns
single MOSFETs transistor is 20mOhm
a 20V drain to source voltage (Vdss)
IRL3302PBF Applications
There are a lot of Infineon Technologies
IRL3302PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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