IRL3302

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

20m Ω @ 23A, 7V

Surface Mount :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

3

Power Dissipation-Max :

57W Tc

Series :

HEXFET®

Terminal Position :

Single

Drain-source On Resistance-Max :

0.02Ohm

Published :

1998

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 4.5V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

39A

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSFM-T3