IRL3215
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- Mfr.Part #
- IRL3215
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 12A TO220AB
- Stock
- 45,634
- In Stock ：
- 45,634
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 775pF @ 25V
- Published :
- 2011
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 5V
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 80W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Rds On (Max) @ Id, Vgs :
- 166m Ω @ 7.2A, 10V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±16V
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- IRL3215
N-Channel Tube 166m Ω @ 7.2A, 10V ±16V 775pF @ 25V 35nC @ 5V 150V TO-220-3
FDP61N20 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FDP61N20 Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
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