IRL3202S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

48A

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.019Ohm

Published :

1998

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN OVER NICKEL

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Avalanche Energy Rating (Eas) :

270 mJ

FET Type :

N-Channel

Number of Terminations :

2

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Packaging :

Tube

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Terminal Position :

Single

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Surface Mount :

yes

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

700mV @ 250μA

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

16m Ω @ 29A, 7V

Pulsed Drain Current-Max (IDM) :

190A

Power Dissipation-Max :

69W Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Mounting Type :

Surface Mount

Case Connection :

DRAIN