IRL3202PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

10V

Drain to Source Resistance :

19mOhm

Turn-Off Delay Time :

12 ns

Length :

10.5156mm

Rds On (Max) @ Id, Vgs :

16mOhm @ 29A, 7V

Max Operating Temperature :

150°C

Rds On Max :

16 mΩ

Vgs(th) (Max) @ Id :

700mV @ 250μA

Continuous Drain Current (ID) :

48A

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 15V

Min Operating Temperature :

-55°C

Turn On Delay Time :

8.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Mount :

Through Hole

Rise Time :

100ns

Nominal Vgs :

700 mV

FET Type :

N-Channel

Packaging :

Tube

Height :

15.24mm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

20V

Published :

2004

Lead Free :

Lead Free

Vgs (Max) :

±10V

Power Dissipation-Max :

69W Tc

Fall Time (Typ) :

82 ns

Recovery Time :

100 ns

Power Dissipation :

69W

Mounting Type :

Through Hole

Width :

4.69mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Input Capacitance :

2nF

Current Rating :

48A

Drain to Source Breakdown Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

48A Tc

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Supplier Device Package :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 4.5V

Series :

HEXFET®