IRL3103STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation :

110W

Input Capacitance :

1.65nF

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

12mOhm @ 34A, 10V

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

94W Tc

Turn-Off Delay Time :

14 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Number of Pins :

3

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-55°C

Number of Elements :

1

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Fall Time (Typ) :

9.1 ns

Current - Continuous Drain (Id) @ 25°C :

64A Tc

FET Type :

N-Channel

Rds On Max :

12 mΩ

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

64A

Drain to Source Resistance :

16mOhm

Turn On Delay Time :

8.9 ns

Gate to Source Voltage (Vgs) :

16V

Supplier Device Package :

D2PAK

Rise Time :

120ns

Radiation Hardening :

No

Published :

2004