IRL3103STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Series :

HEXFET®

Voltage - Rated DC :

30V

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Length :

10.668mm

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Turn-Off Delay Time :

14 ns

Width :

9.65mm

Vgs (Max) :

±16V

Radiation Hardening :

No

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Turn On Delay Time :

8.9 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Contains Lead

Power Dissipation :

110W

FET Type :

N-Channel

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

120ns

Case Connection :

DRAIN

Contact Plating :

Tin

Height :

4.826mm

Pulsed Drain Current-Max (IDM) :

220A

Fall Time (Typ) :

9.1 ns

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Additional Feature :

AVALANCHE RATED

Current Rating :

64A

Element Configuration :

Single

Resistance :

12mOhm

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

94W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

64A Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

64A

Drain to Source Breakdown Voltage :

30V

Published :

2004