IRL3103STRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

120ns

Current Rating :

64A

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

64A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

110W

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Fall Time (Typ) :

9.1 ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

12mOhm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

220A

Turn-Off Delay Time :

14 ns

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

94W Tc

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Turn On Delay Time :

8.9 ns

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

30V

JESD-609 Code :

e3

Published :

2004

Width :

9.65mm

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Height :

4.826mm

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Number of Terminations :

2

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Vgs (Max) :

±16V