IRL3103STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

130 mJ

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Case Connection :

DRAIN

Power Dissipation-Max :

94W Tc

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Surface Mount :

yes

Drain-source On Resistance-Max :

0.012Ohm

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Published :

2001

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Pulsed Drain Current-Max (IDM) :

220A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

64A

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Vgs (Max) :

±16V

JESD-30 Code :

R-PSSO-G2