IRL3103S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

94W Tc

Vgs (Max) :

±16V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Series :

HEXFET®

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

220A

Number of Terminations :

2

Transistor Element Material :

SILICON

Published :

2002

Peak Reflow Temperature (Cel) :

225

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

FET Type :

N-Channel

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

130 mJ

Drain-source On Resistance-Max :

0.012Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

64A

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

JESD-609 Code :

e0

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Case Connection :

DRAIN