IRL3103PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Case Connection :

DRAIN

Number of Pins :

3

Lead Pitch :

2.54mm

Published :

2001

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Length :

10.5156mm

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Mount :

Through Hole

Turn On Delay Time :

8.9 ns

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Number of Terminations :

3

Resistance :

12mOhm

Packaging :

Tube

Power Dissipation-Max :

94W Tc

Power Dissipation :

83W

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

56A

Pulsed Drain Current-Max (IDM) :

220A

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Fall Time (Typ) :

9.1 ns

Dual Supply Voltage :

30V

Termination :

Through Hole

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

1 V

Height :

15.24mm

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Lead Free :

Contains Lead, Lead Free

Threshold Voltage :

1V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Current Rating :

64A

Width :

4.69mm

Series :

HEXFET®

Number of Elements :

1

Rise Time :

120ns

Continuous Drain Current (ID) :

64A

Turn-Off Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

1V @ 250μA

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V