IRL3103PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

56A

REACH SVHC :

No SVHC

Resistance :

12mOhm

Lead Pitch :

2.54mm

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Number of Elements :

1

Published :

2001

Radiation Hardening :

No

Transistor Element Material :

SILICON

Fall Time (Typ) :

9.1 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

220A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Power Dissipation :

83W

Rise Time :

120ns

Gate to Source Voltage (Vgs) :

16V

Nominal Vgs :

1 V

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Turn On Delay Time :

8.9 ns

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Packaging :

Tube

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

94W Tc

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

14 ns

Transistor Application :

SWITCHING

Lead Free :

Contains Lead, Lead Free

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

1650pF @ 25V

Dual Supply Voltage :

30V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

64A

Mount :

Through Hole

Number of Pins :

3

Width :

4.69mm

ECCN Code :

EAR99

Height :

15.24mm

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Current Rating :

64A

Length :

10.5156mm

Rds On (Max) @ Id, Vgs :

12m Ω @ 34A, 10V

Element Configuration :

Single

Number of Terminations :

3

Termination :

Through Hole

Threshold Voltage :

1V