IRL3103LPBF
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- Mfr.Part #
- IRL3103LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 64A TO262
- Stock
- 20,844
- In Stock ：
- 20,844
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 9.1 ns
- Nominal Vgs :
- 1 V
- Rise Time :
- 120ns
- Packaging :
- Tube
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Power Dissipation :
- 110W
- Resistance :
- 12mOhm
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 16V
- Current Rating :
- 64A
- Series :
- HEXFET®
- Voltage - Rated DC :
- 30V
- REACH SVHC :
- No SVHC
- Width :
- 4.826mm
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 34A, 10V
- Vgs (Max) :
- ±16V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 14 ns
- Height :
- 9.65mm
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 94W Tc
- Length :
- 10.668mm
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1650pF @ 25V
- Turn On Delay Time :
- 8.9 ns
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 64A
- Datasheets
- IRL3103LPBF
N-Channel Tube 12m Ω @ 34A, 10V ±16V 1650pF @ 25V 33nC @ 4.5V TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3103LPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1650pF @ 25V.This device conducts a continuous drain current (ID) of 64A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 14 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRL3103LPBF Features
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
IRL3103LPBF Applications
There are a lot of Infineon Technologies
IRL3103LPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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