IRGC15B60KD
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- Mfr.Part #
- IRGC15B60KD
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 24,310
- In Stock ：
- 24,310
Request A Quote(RFQ)
- * Fullname:
- * Company:
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- Comment:
- * Quantity:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Operating Temperature :
- -55°C~150°C
- Package / Case :
- Die
- Reverse Recovery Time :
- 130ns
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- Die
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 15A
- Mounting Type :
- Surface Mount
- Input Type :
- Standard
- Datasheets
- IRGC15B60KD
IRGC15B60KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGC15B60KD Description
Fast Recovery Diode technology invented by Infineon is called Emitter Controlled-Diode. The Emitter Controlled-Diode from Infineon is best suited for consumer and industrial applications because it lowers the turn-on losses of the IGBT with soft recovery thanks to its ultrathin wafer and field-stop technology. It is designed to work best with Infineon IGBT technology.
IRGC15B60KD Features
-
Voltage - Collector Emitter Breakdown (Max): 600V
-
Reverse Recovery Time: 130ns
-
Current - Collector (Ic) (Max): 15A
-
Supplier Device Package: Die
IRGC15B60KD Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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