IRFTS9342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

40mOhm

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

Recovery Time :

30 ns

Published :

2012

Power Dissipation-Max :

2W Ta

Mounting Type :

Surface Mount

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

40m Ω @ 5.8A, 10V

Turn-Off Delay Time :

45 ns

Number of Pins :

6

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Rise Time :

13ns

Turn On Delay Time :

4.6 ns

Series :

HEXFET®

Fall Time (Typ) :

28 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6

Vgs (Max) :

±20V

Lead Free :

Lead Free

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

595pF @ 25V

Continuous Drain Current (ID) :

5.8A

Transistor Application :

SWITCHING

Number of Terminations :

6

Transistor Element Material :

SILICON

Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V