IRFTS8342TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Threshold Voltage :

1.8V

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Width :

1.75mm

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

2W Ta

Number of Pins :

6

Pulsed Drain Current-Max (IDM) :

80A

Terminal Form :

Gull wing

Number of Terminations :

6

Lead Free :

Lead Free

Contact Plating :

Tin

Turn-Off Delay Time :

9.1 ns

Fall Time (Typ) :

8.2 ns

Mount :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.2A, 10V

Length :

3mm

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

15ns

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Nominal Vgs :

1.8 V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Recovery Time :

12 ns

Mounting Type :

Surface Mount

Resistance :

19mOhm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2W

Turn On Delay Time :

7.3 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8.2A

Height :

1.3mm

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 4.5V