IRFSL41N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Transistor Application :

SWITCHING

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.045Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.1W Ta

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

150V

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

41A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

41A Tc

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

164A

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Series :

HEXFET®

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Elements :

1

Avalanche Energy Rating (Eas) :

470 mJ

Surface Mount :

No

Drain to Source Voltage (Vdss) :

150V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole