IRFSL4020PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Number of Pins :

3

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Width :

15.01mm

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 50V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Length :

10.67mm

Packaging :

Tube

Power Dissipation :

100W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

16 ns

Element Configuration :

Single

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

200V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Power Dissipation-Max :

100W Tc

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Turn On Delay Time :

7.8 ns

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.105Ohm

Continuous Drain Current (ID) :

18A

Avalanche Energy Rating (Eas) :

94 mJ

Fall Time (Typ) :

6.3 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Pulsed Drain Current-Max (IDM) :

52A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

105m Ω @ 11A, 10V

JESD-609 Code :

e3