IRFS7540PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

56 ns

Input Capacitance (Ciss) (Max) @ Vds :

4555pF @ 25V

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®, StrongIRFET™

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Continuous Drain Current (ID) :

110A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Channels :

1

Power Dissipation :

160W

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Turn-Off Delay Time :

58 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2007

Number of Terminations :

2

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Packaging :

Tube

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 65A, 10V

Rise Time :

76ns

Weight :

3.949996g

Power Dissipation-Max :

160W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Number of Pins :

3