IRFS59N10DTRLP
- Mfr.Part #
- IRFS59N10DTRLP
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 59A TO263-3-2
- Stock
- 4,600
- In Stock :
- 4,600
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 5.5 V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 200W
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 59A
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 35.4A, 10V
- Voltage - Rated DC :
- 100V
- Dual Supply Voltage :
- 100V
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 59A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2450pF @ 25V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Width :
- 10.54mm
- Length :
- 10.668mm
- Resistance :
- 25mOhm
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2004
- Threshold Voltage :
- 5.5V
- Fall Time (Typ) :
- 12 ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- HEXFET®
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 20 ns
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- REACH SVHC :
- No SVHC
- Lead Free :
- Contains Lead, Lead Free
- Rise Time :
- 90ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 4.826mm
- Number of Pins :
- 3
- Datasheets
- IRFS59N10DTRLP

N-Channel Tape & Reel (TR) 25m Ω @ 35.4A, 10V ±30V 2450pF @ 25V 114nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS59N10DTRLP Overview
The maximum input capacitance of this device is 2450pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 59A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 16 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS59N10DTRLP Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
a threshold voltage of 5.5V
IRFS59N10DTRLP Applications
There are a lot of Infineon Technologies
IRFS59N10DTRLP applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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