IRFS4610TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Published :

2010

Max Operating Temperature :

175°C

Height :

4.826mm

Rds On Max :

14 mΩ

Drain to Source Resistance :

14mOhm

Length :

10.668mm

Mounting Type :

Surface Mount

Width :

9.65mm

Mount :

Surface Mount

Series :

HEXFET®

Continuous Drain Current (ID) :

73A

Power Dissipation :

190W

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

70 ns

FET Type :

N-Channel

Element Configuration :

Single

Turn On Delay Time :

18 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 100µA

Rds On (Max) @ Id, Vgs :

14mOhm @ 44A, 10V

Rise Time :

87ns

Power Dissipation-Max :

190W Tc

RoHS Status :

RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

53 ns

Input Capacitance :

3.55nF

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Radiation Hardening :

No

Supplier Device Package :

D2PAK

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)