IRFS4310TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

980 mJ

Vgs (Max) :

±20V

Recovery Time :

68 ns

REACH SVHC :

No SVHC

Mount :

Surface Mount

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Width :

9.65mm

Published :

2006

Nominal Vgs :

4 V

Continuous Drain Current (ID) :

140A

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

26 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Dual Supply Voltage :

100V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Resistance :

7mOhm

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Length :

10.668mm

Power Dissipation :

300W

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Fall Time (Typ) :

78 ns

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Current Rating :

140A

Power Dissipation-Max :

300W Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Rise Time :

110ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Height :

4.826mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Lead Free :

Contains Lead

Element Configuration :

Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

68 ns

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

550A

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V