IRFR420
- Mfr.Part #
- IRFR420
- Manufacturer
- Harris Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- 2.5A 500V 3.000 OHM N-CHANNEL
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Published :
- 2014
- Drain to Source Breakdown Voltage :
- 500V
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Fall Time (Typ) :
- 16 ns
- Packaging :
- Tube
- Supplier Device Package :
- D-Pak
- Voltage - Rated DC :
- 500V
- Number of Elements :
- 1
- Input Capacitance :
- 360pF
- Element Configuration :
- Single
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 3Ohm
- Turn-Off Delay Time :
- 33 ns
- Lead Free :
- Contains Lead
- Continuous Drain Current (ID) :
- 2.4A
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 1.4A, 10V
- Rds On Max :
- 3 Ω
- RoHS Status :
- Non-RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 2.4A
- Number of Pins :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 42W
- Rise Time :
- 8.6ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRFR420

N-Channel Tube 3Ohm @ 1.4A, 10V ±20V 360pF @ 25V 19nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR420 Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.4A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 33 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFR420 Features
a continuous drain current (ID) of 2.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRFR420 Applications
There are a lot of Vishay Siliconix
IRFR420 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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