IRFR3709ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Series :

HEXFET®

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

340A

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Vgs(th) (Max) @ Id :

2.25V @ 250μA

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

30A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

79W Tc

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

100 mJ

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0065ohm

Vgs (Max) :

±20V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2330pF @ 15V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Qualification Status :

Not Qualified