IRFI9Z34N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

37W Tc

Published :

1997

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-220-3 Full Pack

FET Type :

P-Channel

JESD-609 Code :

e0

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

225

Operating Temperature (Max) :

175°C

Number of Terminations :

3

Mounting Type :

Through Hole

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

14A Tc

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.8A, 10V

Avalanche Energy Rating (Eas) :

180 mJ

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

14A

Drain-source On Resistance-Max :

0.1Ohm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

68A