IRCZ44PBF
- Mfr.Part #
- IRCZ44PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO220-5
- Stock
- 46,260
- In Stock :
- 46,260
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 120ns
- Weight :
- 3.000003g
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 31A, 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- Drain-source On Resistance-Max :
- 0.028Ohm
- Mount :
- Through Hole
- Length :
- 10.67mm
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 50A
- Width :
- 4.83mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 50A
- Package / Case :
- TO-220-5
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 150W Tc
- Avalanche Energy Rating (Eas) :
- 30 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 19 ns
- Published :
- 1997
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 9.02mm
- Turn-Off Delay Time :
- 55 ns
- Power Dissipation :
- 150W
- ECCN Code :
- EAR99
- Series :
- HEXFET®
- Fall Time (Typ) :
- 86 ns
- FET Feature :
- Current Sensing
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Pin Count :
- 5
- Datasheets
- IRCZ44PBF
N-Channel Tube 28m Ω @ 31A, 10V ±20V 2500pF @ 25V 95nC @ 10V TO-220-5
IRCZ44PBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 30 mJ.The maximum input capacitance of this device is 2500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 55 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 19 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRCZ44PBF Features
the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
IRCZ44PBF Applications
There are a lot of Vishay Siliconix
IRCZ44PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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