IRCZ34PBF

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Mfr.Part #
IRCZ34PBF
Manufacturer
Vishay
Package / Case
TO-220-5
Datasheet
Download
Description
MOSFET N-CH 60V 30A TO220-5
Stock
8,665
In Stock :
8,665

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
52 ns
Rise Time :
100ns
Packaging :
Tube
Mounting Type :
Through Hole
Series :
HEXFET®
Drain to Source Voltage (Vdss) :
60V
Min Operating Temperature :
-55°C
Turn-Off Delay Time :
29 ns
Drain to Source Breakdown Voltage :
60V
Length :
10.67mm
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
1997
Vgs (Max) :
±20V
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Package / Case :
TO-220-5
FET Type :
N-Channel
FET Feature :
Current Sensing
Width :
4.83mm
RoHS Status :
ROHS3 Compliant
Rds On Max :
50 mΩ
Continuous Drain Current (ID) :
30A
Turn On Delay Time :
13 ns
Rds On (Max) @ Id, Vgs :
50mOhm @ 18A, 10V
Input Capacitance :
1.3nF
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
88W Tc
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Supplier Device Package :
TO-220-5
Height :
9.02mm
Weight :
3.000003g
Max Operating Temperature :
175°C
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Drain to Source Resistance :
50mOhm
Datasheets
IRCZ34PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRCZ34PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-220-5, Operating Temperature:-55°C~175°C TJ, IRCZ34PBF pinout, IRCZ34PBF datasheet PDF, IRCZ34PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRCZ34PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 50mOhm @ 18A, 10V ±20V 1300pF @ 25V 46nC @ 10V 60V TO-220-5

IRCZ34PBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1300pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 29 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 50mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRCZ34PBF Features


a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 29 ns
single MOSFETs transistor is 50mOhm
a 60V drain to source voltage (Vdss)


IRCZ34PBF Applications


There are a lot of Vishay Siliconix
IRCZ34PBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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