IRC840PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Transistor Element Material :

SILICON

Package / Case :

TO-220-5

Configuration :

Single

Reach Compliance Code :

Unknown

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

32A

Series :

HEXFET®

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

8A

RoHS Status :

ROHS3 Compliant

Pin Count :

5

Length :

10.67mm

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

125W Tc

Weight :

3.000003g

Turn On Delay Time :

14 ns

Continuous Drain Current (ID) :

8A

Number of Channels :

1

Qualification Status :

Not Qualified

Rise Time :

22ns

Height :

9.02mm

Width :

4.83mm

Vgs (Max) :

±20V

Fall Time (Typ) :

21 ns

Number of Pins :

5

Turn-Off Delay Time :

55 ns

FET Feature :

Current Sensing

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Number of Elements :

1