IRC830PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

8.2 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Width :

4.83mm

Terminal Position :

Single

Turn-Off Delay Time :

42 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Transistor Application :

SWITCHING

Rise Time :

16ns

Series :

HEXFET®

Transistor Element Material :

SILICON

Weight :

3.000003g

JESD-30 Code :

R-PSFM-T5

Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.7A, 10V

Avalanche Energy Rating (Eas) :

280 mJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Number of Elements :

1

Length :

10.67mm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

74W Tc

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Height :

9.02mm

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-5

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Pin Count :

5

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4.5A

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Mount :

Through Hole

Packaging :

Tube

Published :

1997

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

FET Feature :

Current Sensing

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE