IPZ40N04S5L2R8ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 20A, 10V

Transistor Element Material :

SILICON

Turn On Delay Time :

4 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mount :

Surface Mount

Max Dual Supply Voltage :

40V

Number of Terminations :

3

Power Dissipation :

71W

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Number of Pins :

8

Package / Case :

8-PowerVDFN

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PDSO-N3

Published :

2004

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

71W Tc

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

175°C

Vgs(th) (Max) @ Id :

2V @ 30μA

Series :

Automotive, AEC-Q101, OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

1.15mm

Factory Lead Time :

16 Weeks

Terminal Position :

Dual

Number of Elements :

1

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

40A

Number of Channels :

1

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED