IPZ40N04S55R4ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Package / Case :

8-PowerVDFN

Avalanche Energy Rating (Eas) :

53 mJ

Power Dissipation-Max :

48W Tc

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Continuous Drain Current (ID) :

40A

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0063Ohm

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Lead Free :

Contains Lead

FET Type :

N-Channel

Number of Pins :

8

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

JESD-30 Code :

R-PDSO-N3

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

160A

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

3.4V @ 17μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

40V

Pbfree Code :

yes

Factory Lead Time :

16 Weeks

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3