IPSH6N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 50A, 10V

JEDEC-95 Code :

TO-251AA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

25V

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

150 mJ

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Package / Case :

TO-251-3 Stub Leads, IPak

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

350A

Number of Terminations :

3

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Series :

OptiMOS™

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Power Dissipation-Max :

71W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 30μA

Drain Current-Max (Abs) (ID) :

50A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2008

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.0062Ohm

Surface Mount :

No

Number of Elements :

1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 15V