IPSH4N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

360A

JESD-609 Code :

e3

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0044Ohm

Number of Elements :

1

Power Dissipation-Max :

94W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Avalanche Energy Rating (Eas) :

150 mJ

Drain to Source Voltage (Vdss) :

25V

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

90A

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 60A, 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 40µA

Number of Terminations :

3

Package / Case :

TO-251-3 Stub Leads, IPak

Pin Count :

3

Published :

2008

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 15V

Mounting Type :

Through Hole