IPS70R950CEAKMA1
- Mfr.Part #
- IPS70R950CEAKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Stub Leads, IPak
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 7.4A TO251
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Continuous Drain Current (ID) :
- 7.4A
- FET Feature :
- Super Junction
- Terminal Position :
- Single
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 68W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 12A
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 150μA
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -40°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 1.5A, 10V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.95Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Tc
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 15.3nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 328pF @ 100V
- Series :
- CoolMOS™
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Halogen Free :
- Halogen Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 700V
- Datasheets
- IPS70R950CEAKMA1

N-Channel Tube 950m Ω @ 1.5A, 10V ±20V 328pF @ 100V 15.3nC @ 10V TO-251-3 Stub Leads, IPak
IPS70R950CEAKMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 50 mJ.A device's maximal input capacitance is 328pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7.4A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 12A, which is its maximum rated peak drain current.By using 700V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPS70R950CEAKMA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 7.4A
based on its rated peak drain current 12A.
IPS70R950CEAKMA1 Applications
There are a lot of Infineon Technologies
IPS70R950CEAKMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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