IPS70R2K0CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Mounting Type :

Through Hole

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

163pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Drain-source On Resistance-Max :

2Ohm

Series :

CoolMOS™

Terminal Finish :

Tin (Sn)

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

6.3A

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

700V

Avalanche Energy Rating (Eas) :

11 mJ

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

JESD-609 Code :

e3

Packaging :

Tube

Transistor Application :

SWITCHING

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

42W Tc

Reach Compliance Code :

not_compliant

FET Feature :

Super Junction

DS Breakdown Voltage-Min :

700V

Number of Terminations :

3

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Continuous Drain Current (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED