IPS70R600CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

55 mJ

Packaging :

Tube

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 0.21mA

Number of Pins :

3

DS Breakdown Voltage-Min :

700V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

474pF @ 100V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

10.5A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.6Ohm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

600m Ω @ 1A, 10V

Terminal Position :

Single

Published :

2016

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

700V

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Power Dissipation-Max :

86W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs (Max) :

±20V

ECCN Code :

EAR99

Package / Case :

TO-251-3 Stub Leads, IPak

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V

FET Feature :

Super Junction

Pulsed Drain Current-Max (IDM) :

18A

Mounting Type :

Through Hole

Mount :

Through Hole

Transistor Element Material :

SILICON