IPS65R650CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

Packaging :

Tube

FET Type :

N-Channel

Power Dissipation-Max :

86W Tc

Max Dual Supply Voltage :

650V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

700V

Halogen Free :

Halogen Free

Number of Elements :

1

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Drain-source On Resistance-Max :

0.65Ohm

RoHS Status :

ROHS3 Compliant

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 210µA

JESD-30 Code :

R-PSIP-T3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

10.1A Tc

Mounting Type :

Through Hole

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

142 mJ

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

18A

Transistor Element Material :

SILICON

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)