IPS60R3K4CEAKMA1

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Mfr.Part #
IPS60R3K4CEAKMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
CONSUMER
Stock
75
In Stock :
75

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Halogen Free :
Halogen Free
Surface Mount :
No
Lead Free :
Contains Lead
Max Operating Temperature :
150°C
Factory Lead Time :
18 Weeks
Published :
2013
JEDEC-95 Code :
TO-251
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
JESD-609 Code :
e3
Number of Terminations :
3
Number of Elements :
1
Max Dual Supply Voltage :
600V
Drain-source On Resistance-Max :
3.4Ohm
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSIP-T3
Terminal Form :
THROUGH-HOLE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Avalanche Energy Rating (Eas) :
6 mJ
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
3.9A
Reach Compliance Code :
not_compliant
Drain to Source Voltage (Vdss) :
600V
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Min Operating Temperature :
-40°C
Datasheets
IPS60R3K4CEAKMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPS60R3K4CEAKMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, IPS60R3K4CEAKMA1 pinout, IPS60R3K4CEAKMA1 datasheet PDF, IPS60R3K4CEAKMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPS60R3K4CEAKMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPS60R3K4CEAKMA1


600V

IPS60R3K4CEAKMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 6 mJ.Its maximum pulsed drain current is 3.9A, which is also its maximum rating peak drainage current.Powered by 600V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).

IPS60R3K4CEAKMA1 Features


the avalanche energy rating (Eas) is 6 mJ
based on its rated peak drain current 3.9A.
a 600V drain to source voltage (Vdss)


IPS60R3K4CEAKMA1 Applications


There are a lot of Infineon Technologies
IPS60R3K4CEAKMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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