IPS65R600E6AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Published :

2015

Vgs (Max) :

±20V

Mount :

Through Hole

Packaging :

Tube

Package / Case :

TO-251-3 Stub Leads, IPak

Pbfree Code :

yes

ECCN Code :

EAR99

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.6Ohm

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™ E6

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Lead Free :

Contains Lead

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

142 mJ

Pulsed Drain Current-Max (IDM) :

18A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.3A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

650V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation-Max :

63W Tc

Halogen Free :

Halogen Free

Terminal Position :

Single