IPS65R1K5CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Number of Elements :

1

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 100V

Series :

CoolMOS™ CE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

18.2 ns

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Turn On Delay Time :

7.7 ns

Case Connection :

DRAIN

Continuous Drain Current (ID) :

3.1A

Avalanche Energy Rating (Eas) :

26 mJ

Pulsed Drain Current-Max (IDM) :

8.3A

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1A, 10V

Mount :

Through Hole

Max Dual Supply Voltage :

650V

Turn-Off Delay Time :

33 ns

FET Type :

N-Channel

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Stub Leads, IPak

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Power Dissipation-Max :

28W Tc

Mounting Type :

Through Hole

Rise Time :

5.9ns

Element Configuration :

Single

Packaging :

Tube

ECCN Code :

EAR99

Weight :

343.085929mg

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Operating Temperature :

-40°C~150°C TJ