IPS65R1K0CEAKMA1
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- Mfr.Part #
- IPS65R1K0CEAKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Stub Leads, IPak
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4.3A TO251
- Stock
- 1,392
- In Stock ：
- 1,392
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- Turn On Delay Time :
- 6.6 ns
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 1Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 37W Tc
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Factory Lead Time :
- 6 Weeks
- Vgs(th) (Max) @ Id :
- 3.5V @ 200µA
- Operating Temperature :
- -40°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 41 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 343.085929mg
- Continuous Drain Current (ID) :
- 4.3A
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 328pF @ 100V
- Drain to Source Breakdown Voltage :
- 650V
- Lead Free :
- Contains Lead
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 650V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Rise Time :
- 5.2ns
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 15.3nC @ 10V
- Packaging :
- Tube
- Series :
- CoolMOS™ CE
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 13.6 ns
- Datasheets
- IPS65R1K0CEAKMA1
N-Channel Tube 1 Ω @ 1.5A, 10V ±20V 328pF @ 100V 15.3nC @ 10V TO-251-3 Stub Leads, IPak
IPS65R1K0CEAKMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 328pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 41 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPS65R1K0CEAKMA1 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 41 ns
IPS65R1K0CEAKMA1 Applications
There are a lot of Infineon Technologies
IPS65R1K0CEAKMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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