IPS60R800CEAKMA1

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Mfr.Part #
IPS60R800CEAKMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
CONSUMER
Stock
3,000
In Stock :
3,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
600V
Min Operating Temperature :
-40°C
Lead Free :
Contains Lead
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSIP-T3
ECCN Code :
EAR99
Pbfree Code :
yes
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
Single
Published :
2013
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Max Dual Supply Voltage :
600V
Drain-source On Resistance-Max :
0.8Ohm
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-251
Reach Compliance Code :
not_compliant
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Terminal Form :
THROUGH-HOLE
Max Operating Temperature :
150°C
RoHS Status :
ROHS3 Compliant
Halogen Free :
Halogen Free
Factory Lead Time :
18 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
15.7A
Avalanche Energy Rating (Eas) :
72 mJ
Transistor Application :
SWITCHING
Datasheets
IPS60R800CEAKMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPS60R800CEAKMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, IPS60R800CEAKMA1 pinout, IPS60R800CEAKMA1 datasheet PDF, IPS60R800CEAKMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPS60R800CEAKMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPS60R800CEAKMA1


600V

IPS60R800CEAKMA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 72 mJ.In terms of pulsed drain current, it has a maximum of 15.7A, which is its maximum rated peak drain current.By using 600V, it can supply the maximum voltage from two sources.This transistor requires a 600V drain to source voltage (Vdss).

IPS60R800CEAKMA1 Features


the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 15.7A.
a 600V drain to source voltage (Vdss)


IPS60R800CEAKMA1 Applications


There are a lot of Infineon Technologies
IPS60R800CEAKMA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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