IPP65R190CFDAAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 100V

Number of Elements :

1

Drain-source On Resistance-Max :

0.19Ohm

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, CoolMOS™

Max Dual Supply Voltage :

650V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Additional Feature :

High Reliability

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Mount :

Through Hole

Continuous Drain Current (ID) :

17.5A

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Mounting Type :

Through Hole

Packaging :

Tube

Avalanche Energy Rating (Eas) :

484 mJ

Vgs(th) (Max) @ Id :

4.5V @ 700μA

Pulsed Drain Current-Max (IDM) :

57.2A

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

151W Tc