IPI70N04S406AKSA1
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- Mfr.Part #
- IPI70N04S406AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 70A TO262-3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2550pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 26μA
- Series :
- OptiMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 280A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 40V
- Avalanche Energy Rating (Eas) :
- 72 mJ
- FET Type :
- N-Channel
- Published :
- 2010
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 70A, 10V
- Factory Lead Time :
- 16 Weeks
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Power Dissipation-Max :
- 58W Tc
- Surface Mount :
- No
- JESD-30 Code :
- R-PSIP-T3
- Drain-source On Resistance-Max :
- 0.0065ohm
- Drain Current-Max (Abs) (ID) :
- 70A
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- DS Breakdown Voltage-Min :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPI70N04S406AKSA1
N-Channel Tube 6.5m Ω @ 70A, 10V ±20V 2550pF @ 25V 32nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI70N04S406AKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 72 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2550pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 70A.Pulsed drain current is maximum rated peak drain current 280A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPI70N04S406AKSA1 Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 280A.
a 40V drain to source voltage (Vdss)
IPI70N04S406AKSA1 Applications
There are a lot of Infineon Technologies
IPI70N04S406AKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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